High Power RF & Microwave Flange Terminations
General Specifications
§ Standard Resistance: 50 Ohms ± 5%
§ Frequency: DC – 18 GHz
§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)
§ Resistive Film: Thick Film
§ Power: 10 – 1650 W CW
Lead-Free, RoHS certified
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | EP Part Number | Frequency (GHz) | Power (W) | VSWR (max) | Resistance (Ω) ± 5% | Dimensions inch | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|
| EPFT-975-B250-50-5 | 4 | 250 | 1.2 | 50 | 0.975 x 0.375 x 0.193 | 24.77 x 9.53 x 4.92 | | BeO (Beryllium Oxide) |
| EPFT-1250-B500-50-5 | 4 | 500 | 1.2 | 50 | 1.250 x 0.500 x 0.236 | 31.75 x 12.70 x 6.00 | | BeO (Beryllium Oxide) |
| EPFT-1900-B1650-50-5 | 1.5 | 1650 | 1.3 | 50 | 1.897 x 1.260 x 0.398 | 48.20 x 32.00 10.10 | | BeO (Beryllium Oxide) |
| EPFT-300-N10-50-5 | 18 | 10 | 1.35 | 50 | 0.300 x 0.200 x 0.102 | 7.62 x 5.08 x 2.60 | | AlN (Aluminum Nitride) |
| EPFT-516-N40-50-5 | 9 | 40 | 1.25 | 50 | 0.516 x 0.250 x 0.087 | 13.1 x 6.35 x 2.20 | | AlN (Aluminum Nitride) |
| EPFT-516-N80-50-5 | 6 | 80 | 1.2 | 50 | 0.516 x 0.250 x 0.101 | 13.1 x 6.35 x 2.57 | | AlN (Aluminum Nitride) |
| EPFT-516-N100-50-5 | 5 | 100 | 1.2 | 50 | 0.516 x 0.250 x 0.150 | 13.1 x 6.35 x 3.80 | | AlN (Aluminum Nitride) |
| EPFT-870-N150-50-5 | 4 | 150 | 1.2 | 50 | 0.870 x 0.375 x 0.121 | 22.1 x 9.53 x 3.07 | | AlN (Aluminum Nitride) |
| EPFT-1250-N400-50-5 | 1 | 400 | 1.1 | 50 | 1.250 x 0.500 x 0.228 | 31.75 x 12.70 x 5.80 | | AlN (Aluminum Nitride) |
| EPFT-1900-N800-50-5 | 1 | 800 | 1.25 | 50 | 1.898 x 1.040 x 0.378 | 48.20 x 26.40 x 9.60 | | AlN (Aluminum Nitride) |
| EPFT-1900-N1000-50-5 | 1 | 1000 | 1.1 | 50 | 1.898 x 1.040 x 0.421 | 48.20 x 26.4 x 10.70 | | AlN (Aluminum Nitride) |
