High Power RF & Microwave Flange Terminations

General Specifications

§  Standard Resistance: 50 Ohms ± 5%

§  Frequency: DC – 15 GHz

§  Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)

§  Resistive Film: Thick Film

§ Power: 10 – 1650 W CW

Lead-Free,  RoHS certified

If you don’t see what you’re looking for, please email us at  alen@electro-photonics.com and we may be able to help you.

Product ImageEP Part NumberFrequency (GHz)Power (W)VSWR (max)Resistance (Ω) ± 5%Dimensions
inch
Dimensions [mm]DatasheetSubstrate Material


EPFT-300-N10-50-515101.35500.300 x 0.200 x 0.1027.62 x 5.08 x 2.60


AlN (Aluminum Nitride)


EPFT-516-N40-50-59401.25500.516 x 0.250 x 0.08713.1 x 6.35 x 2.20


AlN (Aluminum Nitride)


EPFT-516-N80-50-56801.2500.516 x 0.250 x 0.10113.1 x 6.35 x 2.57


AlN (Aluminum Nitride)


EPFT-516-N100-50-551001.2500.516 x 0.250 x 0.15013.1 x 6.35 x 3.80


AlN (Aluminum Nitride)


EPFT-975-B250-50-542501.2500.975 x 0.375 x 0.19324.77 x 9.53 x 4.92


BeO (Beryllium Oxide)


EPFT-1250-B500-50-545001.2501.250 x 0.500 x 0.23631.75 x 12.70 x 6.00


BeO (Beryllium Oxide)


EPFT-870-N150-50-541501.2500.870 x 0.375 x 0.12122.1 x 9.53 x 3.07


AlN (Aluminum Nitride)


EPFT-975-BHT250-50-532501.25500.975 x 0.375 x 0.19424.77 x 9.53 x 4.92


BeO (Beryllium Oxide)


EPFT-1900-BE1000-50-52.4 -2.510001.15501.898 x 1.040 x 0.29548.20 x 26.40 x 7.5


BeO (Beryllium Oxide)


EPFT-1900-B1650-50-51.516501.3501.897 x 1.260 x 0.39848.20 x 32.00 10.10


BeO (Beryllium Oxide)


EPFT-1250-N400-50-514001.1501.250 x 0.500 x 0.22831.75 x 12.70 x 5.80


AlN (Aluminum Nitride)


EPFT-1900-N800-50-518001.25501.898 x 1.040 x 0.37848.20 x 26.40 x 9.60


AlN (Aluminum Nitride)


EPFT-1900-N1000-50-5110001.1501.898 x 1.040 x 0.42148.20 x 26.4 x 10.70


AlN (Aluminum Nitride)