High Power RF & Microwave Flange Terminations General Specifications§ Standard Resistance: 50 Ohms ± 5%§ Frequency: DC – 18 GHz§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)§ Resistive Film: Thick Film§ Power: 10 – 1650 W CW Lead-Free, RoHS certified If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you. Product ImageEP Part NumberFrequency (GHz)Power (W)VSWR (max)Resistance (Ω) ± 5%Dimensions inchDimensions [mm]DatasheetSubstrate Material EPFT-975-B250-50-542501.2500.975 x 0.375 x 0.19324.77 x 9.53 x 4.92 BeO (Beryllium Oxide) EPFT-1250-B500-50-545001.2501.250 x 0.500 x 0.23631.75 x 12.70 x 6.00 BeO (Beryllium Oxide) EPFT-1900-B1650-50-51.516501.3501.897 x 1.260 x 0.39848.20 x 32.00 10.10 BeO (Beryllium Oxide) EPFT-300-N10-50-518101.35500.300 x 0.200 x 0.1027.62 x 5.08 x 2.60 AlN (Aluminum Nitride) EPFT-516-N40-50-59401.25500.516 x 0.250 x 0.08713.1 x 6.35 x 2.20 AlN (Aluminum Nitride) EPFT-516-N80-50-56801.2500.516 x 0.250 x 0.10113.1 x 6.35 x 2.57 AlN (Aluminum Nitride) EPFT-516-N100-50-551001.2500.516 x 0.250 x 0.15013.1 x 6.35 x 3.80 AlN (Aluminum Nitride) EPFT-870-N150-50-541501.2500.870 x 0.375 x 0.12122.1 x 9.53 x 3.07 AlN (Aluminum Nitride) EPFT-1250-N400-50-514001.1501.250 x 0.500 x 0.22831.75 x 12.70 x 5.80 AlN (Aluminum Nitride) EPFT-1900-N800-50-518001.25501.898 x 1.040 x 0.37848.20 x 26.40 x 9.60 AlN (Aluminum Nitride) EPFT-1900-N1000-50-5110001.1501.898 x 1.040 x 0.42148.20 x 26.4 x 10.70 AlN (Aluminum Nitride)