High Power RF & Microwave Flangeless Resistors General Specifications§ Standard Resistance: 50 and 100 Ohms, ± 5%§ Frequency: DC – 2.2 GHz§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)§ Resistive Film: Thick Film§ Power: 150 – 800 W CW Lead-Free, RoHS compliant If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you. Product ImageEP Part NumberFrequency (GHz)Power (W)Standard Resistance (Ω) ± 5%Capacitance (pF)Dimensions inchDimensions [mm]DatasheetSubstrate Material EPFLR-B150-XXX2.21501002.20.375 x 0.250 0.1109.53 x 6.35 x 2.8 BeO (Beryllium Oxide) EPFLR-B250-XXX225050, 1003.70.375 x 0.375 0.1109.53 x 9.53 x 2.8 BeO (Beryllium Oxide) EPFLR-B500-XXX150050 -1003.10.500 x 0.500 x 0.12212.7 x 12.7 x 3.1 BeO (Beryllium Oxide) EPFLR-B800-XXX0.2580050 -100141.000 x 1.000 x 0.11025.4 x 25.4 x 2.8 BeO (Beryllium Oxide)