High Power RF & Microwave Flangeless Resistors
General Specifications
§ Standard Resistance: 50 and 100 Ohms, ± 5%
§ Frequency: DC – 2.2 GHz
§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)
§ Resistive Film: Thick Film
§ Power: 150 – 800 W CW
Lead-Free, RoHS compliant
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | EP Part Number | Frequency (GHz) | Power (W) | Standard Resistance (Ω) ± 5% | Capacitance (pF) | Dimensions inch | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|
| EPFLR-B150-XXX | 2.2 | 150 | 100 | 2.2 | 0.375 x 0.250 0.110 | 9.53 x 6.35 x 2.8 | | BeO (Beryllium Oxide) |
| EPFLR-B250-XXX | 2 | 250 | 50, 100 | 3.7 | 0.375 x 0.375 0.110 | 9.53 x 9.53 x 2.8 | | BeO (Beryllium Oxide) |
| EPFLR-B500-XXX | 1 | 500 | 50 -100 | 3.1 | 0.500 x 0.500 x 0.122 | 12.7 x 12.7 x 3.1 | | BeO (Beryllium Oxide) |
| EPFLR-B800-XXX | 0.25 | 800 | 50 -100 | 14 | 1.000 x 1.000 x 0.110 | 25.4 x 25.4 x 2.8 | | BeO (Beryllium Oxide) |
