High Power RF & Microwave Flangeless Attenuators

General Specifications

§  Standard Attenuation Values: 1 – 30dB

§  Frequency: DC – 3 GHz

§  Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride)

§  Resistive Film: Thick Film

§ Power: 20 – 100 W CW

Lead-Free,  RoHS compliant

If you don’t see what you’re looking for, please email us at  alen@electro-photonics.com and we may be able to help you.

Product ImageEP Part NumberFrequency (GHz)Power (W)VSWR (max)Dimensions [Inch]Dimensions [mm]DatasheetSubstrate Material


EPFLA-250-B20-XXX3201.250.250 x 0.250 x 0.0836.35 x 6.35 x 2.1


BeO (Beryllium Oxide)


EPFLA-350-B50-XXX3501.250.350 x 0.230 x 0.0438.89 x 5.84 x 1.1


BeO (Beryllium Oxide)


EPFLA-350-B100-XXX31001.20.350 x 0.225 x 0.0438.89 x 5.71 x 1.1


BeO (Beryllium Oxide)