High Power RF & Microwave Chip Terminations General Specifications§ Standard Resistance: 50 Ohms ± 5%§ Frequency: DC – 22 GHz§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride), or Alumina§ Resistive Film: Thick Film§Terminals: PtAg or Silver over NickelPower: 5 – 500 W CWLead-Free, RoHS certified If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you. Product ImageEP Part NumberFrequency (GHz)Power (W)VSWR (max)Resistance (Ω) ± 5%Dimensions inchDimensions [mm]DatasheetSubstrate Material CTB-5-502251.15500.067 x 0.067 x 0.0201.7 x 1.7 x 0.381 BeO (Beryllium Oxide) CTB-10-5018101.3500.100 x 0.121 x 0.0252.54 x 3.08 x 0.635 BeO (Beryllium Oxide) CTB-15-504151.25500.100 x 0.05 x 0.0102.54 x 1.27 x 0.254 BeO (Beryllium Oxide) CTB-400-5024001.15500.500 x 0.500 x 0.07512.7 x 12.7 x 1.9 BeO (Beryllium Oxide) CTN-10-503101.2500.200 x 0.100 x 0.0255.08 x 2.54 x 0.635 AlN (Aluminum Nitride) CTN-20-5014201.3500.125 x 0.125 x 0.0253.17 x 3.17 x 0.635 AlN (Aluminum Nitride) CTN-35-5011351.3500.166 x 0.250 x 0.0254.23 x 6.35 x 0.635 AlN (Aluminum Nitride) CTN-100-5061001.2500.200 x 0.200 x 0.0395.08 x 5.08 x 1 AlN (Aluminum Nitride) CTN-150-5041501.2500.370 x 0.250 0.0479.4 x 6.35 x 1.2 AlN (Aluminum Nitride) CTN-50-508501.3500.125 x 0.200 x 0.6353.17 x 5.08 x 0.635 AlN (Aluminum Nitride) CTN-250-502.22501.15500.374 x 0.374 x 0.0399.5 x 9.5 x 1 AlN (Aluminum Nitride) Ordering Info CTB–5–50 Product CodePower (W)Resistance (Ohm) CTB = BeO CTN = AlN CTA = Alumina5 50 ± 5%