High Power RF & Microwave Chip Resistors General Specifications§ Standard Resistance: 50 and 100 Ohms, ± 5%§ Frequency: DC – 4 GHz§ Substrate Material: BeO (Beryllium Oxide) and AlN (Aluminum Nitride)§ Resistive Film: Thick Film§Terminals: PtAg and Tin over NickelLead-Free, RoHS compliant If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you. Product ImagePart NumberFrequency (GHz)Power (W)Standard Resistance (Ω) ± 5%Capacitance (pF)Dimensions inchDimensions [mm]DatasheetSubstrate Material CRB-20-XXX42050 and 1000.750.200 x 0.100 x 0.0395.08 x 2.54 x 1.00 BeO (Beryllium Oxide) CRB-20-XXX-R42050 and 1000.750.200 x 0.100 x 0.0395.08 x 2.54 x 1.00 BeO (Beryllium Oxide) CRB-20-XXX-G42050 and 1000.750.200 x 0.100 x 0.0395.08 x 2.54 x 1.00 BeO (Beryllium Oxide) CRN-10-XXX41050 and 1000.750.200 x 0.100 x 0.0395.08 x 2.54 x 1.00 AlN (Aluminum Nitride)