High Power RF & Microwave Chip Terminations
General Specifications
§ Standard Resistance: 50 Ohms ± 5%
§ Frequency: DC – 22 GHz
§ Substrate Material: BeO (Beryllium Oxide), AlN (Aluminum Nitride), or Alumina
§ Resistive Film: Thick Film
§Terminals: PtAg or Silver over Nickel
Power: 5 – 500 W CW
Lead-Free, RoHS certified
If you don’t see what you’re looking for, please email us at alen@electro-photonics.com and we may be able to help you.
| Product Image | EP Part Number | Frequency (GHz) | Power (W) | VSWR (max) | Resistance (Ω) ± 5% | Dimensions inch | Dimensions [mm] | Datasheet | Substrate Material |
|---|---|---|---|---|---|---|---|---|---|
| CTB-5-50 | 22 | 5 | 1.15 | 50 | 0.067 x 0.067 x 0.020 | 1.7 x 1.7 x 0.381 | | BeO (Beryllium Oxide) |
| CTB-10-50 | 18 | 10 | 1.3 | 50 | 0.100 x 0.121 x 0.025 | 2.54 x 3.08 x 0.635 | | BeO (Beryllium Oxide) |
| CTB-15-50 | 4 | 15 | 1.25 | 50 | 0.100 x 0.05 x 0.010 | 2.54 x 1.27 x 0.254 | | BeO (Beryllium Oxide) |
| CTB-400-50 | 2 | 400 | 1.15 | 50 | 0.500 x 0.500 x 0.075 | 12.7 x 12.7 x 1.9 | | BeO (Beryllium Oxide) |
| CTN-10-50 | 3 | 10 | 1.2 | 50 | 0.200 x 0.100 x 0.025 | 5.08 x 2.54 x 0.635 | | AlN (Aluminum Nitride) |
| CTN-20-50 | 14 | 20 | 1.3 | 50 | 0.125 x 0.125 x 0.025 | 3.17 x 3.17 x 0.635 | | AlN (Aluminum Nitride) |
| CTN-35-50 | 11 | 35 | 1.3 | 50 | 0.166 x 0.250 x 0.025 | 4.23 x 6.35 x 0.635 | | AlN (Aluminum Nitride) |
| CTN-100-50 | 6 | 100 | 1.2 | 50 | 0.200 x 0.200 x 0.039 | 5.08 x 5.08 x 1 | | AlN (Aluminum Nitride) |
| CTN-150-50 | 4 | 150 | 1.2 | 50 | 0.370 x 0.250 0.047 | 9.4 x 6.35 x 1.2 | | AlN (Aluminum Nitride) |
| CTN-50-50 | 8 | 50 | 1.3 | 50 | 0.125 x 0.200 x 0.635 | 3.17 x 5.08 x 0.635 | | AlN (Aluminum Nitride) |
| CTN-250-50 | 2.2 | 250 | 1.15 | 50 | 0.374 x 0.374 x 0.039 | 9.5 x 9.5 x 1 | | AlN (Aluminum Nitride) |
Ordering Info
| CTB | – | 5 | – | 50 |
| Product Code | Power (W) | Resistance (Ohm) | ||
| CTB = BeO CTN = AlN CTA = Alumina | 5 | 50 ± 5% |